2SC388 0.05a , 30v npn plastic-encapsulated transistor elektronische bauelemente 10-mar-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c e k f d b g h j ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? tv final picture if amplifier applications absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 25 v emitter to base voltage v ebo 4 v collector current - continuous i c 50 ma collector power dissipation p c 300 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 30 - - v i c =10 a, i e =0 collector to emitter breakdown voltage v (br)ceo 25 - - v i c =5ma, i b =0 emitter to base br eakdown voltage v (br)ebo 4 - - v i e =10 a, i c =0 collector cut ? off current i cbo - - 0.1 a v cb =30v, i e =0 emitter cut ? off current i ebo - - 0.1 a v eb =3v, i c =0 dc current gain h fe 20 - 200 v ce =12.5v, i c =12.5ma collector to emitter saturation voltage v ce(sat) - - 0.2 v i c =15ma, i b =1.5ma base to emitter sa turation voltage v be(sat) - - 1.2 v i c =15ma, i b =1.5ma transition frequency f t 300 - - mhz v ce =12.5v, i c =12.5ma collector output capacitance c ob 0.8 - 2 pf v cb =10v, i e =0, f=1mhz power gain gpe 28 - 36 db v cc =12.5v, i e =-12.5ma, f=45mhz ? emitte r ? collector ? base to-92 ref. millimeter min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
2SC388 0.05a , 30v npn plastic-encapsulated transistor elektronische bauelemente 10-mar-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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